pd -2.452 rev. b 03/99 ? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters features description hexfred tm diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode hexfred tm HFA180NH40 half-pak lug terminal anode base cathode d a v r = 400v v f (typ.) ? = 1.1v i f(av) = 180a q rr (typ.) = 420nc i rrm (typ.) = 8.7a t rr (typ.) = 45ns di (rec)m /dt (typ.) ? = 280a/s thermal - mechanical characteristics absolute maximum ratings (per leg) lbf?in (n?m) c/w k/w parameter min. typ. max. units r thjc junction-to-case ???? ???? 0.20 r thcs case-to-sink, flat, greased surface ???? 0.15 ???? wt weight ???? 26 (0.9) ???? g (oz) mounting torque ? 15 (1.7) ???? 25 (2.8) terminal torque 30 (3.4) ???? 40 (4.6) vertical pull ???? ???? 35 2 inch lever pull ???? ???? 35 parameter max. units v r cathode-to-anode voltage 400 v i f @ t c = 25c continuous forward current 321 i f @ t c = 100c continuous forward current 160 i fsm single pulse forward current ? 1200 e as non-repetitive avalanche energy ? 1.4 mj p d @ t c = 25c maximum power dissipation 625 p d @ t c = 100c maximum power dissipation 250 t j operating junction and t stg storage temperature range -55 to +150 w a c lbf?in note: ? limited by junction temperature ? mounting surface must be smooth, flat, free or burrs or other ? l = 100h, duty cycle limited by max t j protrusions. apply a thin even film or thermal grease to mounting ? 125c surface. gradually tighten each mounting bolt in 5-10 lbf?in steps until desired or maximum torque limits are reached. module 1
HFA180NH40 2 pd-2.452 rev. b 03/99 30.40 (1.197) 29.90 (1.177) 18.42 (0.725) 19.69 (0.775) 12.83 (0.505) 12.57 (0.495) dia. 4.11 (0.162) 3.86 (0.152) 19.18 (0.755) 18.92 (0.745) sq. 13.59 (0.535) 14.10 (0.555) 15.75 (0.620) 14.99 (0.590) 3.05 (0.120) 3.30 (0.130) 38.61 (1.520) 39.62 (1.560) dia. 3.86 (0.152) 4.11 (0.162) 1/4-20 unc-2b dimensions in millimeters and inches alf- ak h p 1 2 lead assignments 1 - anode 2 - cathode parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 400 ??? ??? v i r = 100a v fm max forward voltage ??? 1.10 1.35 i f = 180a ??? 1.40 1.65 v i f = 360a ??? 1.10 1.30 i f = 180a, t j = 125c i rm max reverse leakage current ??? 2.0 12 a v r = v r rated ??? 3.0 16 ma t j = 125c, v r = 320v c t junction capacitance ??? 370 500 pf v r = 200v from top of terminal hole to mounting plane electrical characteristics (per leg) @ t j = 25c (unless otherwise specified) dynamic recovery characteristics (per leg) @ t j = 25c (unless otherwise specified) a/s nc a l s series inductance ??? 5.0 ??? nh parameter min. typ. max. units test conditions t rr reverse recovery time ??? 45 ??? i f = 1.0a, di f /dt = 200a/s, v r = 30v t rr1 see fig. 5 ??? 90 140 ns t j = 25c t rr2 ??? 290 440 t j = 125c i f = 180a i rrm1 peak recovery current ??? 8.7 20 t j = 25c i rrm2 see fig. 6 ??? 18 30 t j = 125c v r = 200v q rr1 reverse recovery charge ??? 420 1100 t j = 25c q rr2 see fig. 7 ??? 2600 7000 t j = 125c di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ??? 300 ??? t j = 25c di (rec)m /dt2 during t b see fig. 8 ??? 280 ??? t j = 125c see fig. 1 see fig. 2 see fig. 3
HFA180NH40 3 pd-2.452 rev. b 03/99 fig. 4 - maximum thermal impedance z thjc characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - maximum forward voltage drop vs. instantaneous forward current 0.1 1 10 100 1000 10000 100000 0 100 200 300 400 r r reverse voltage - v (v) t = 150 c reverse current - i ( a) t = 125 c t = 25c j j j 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150 c t = 125c t = 25c j j j 100 1000 10000 1 10 100 1000 t = 25 c j reverse voltage - v (v) r t junction capacitance - c (pf) a 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1 thjc t , rectangular pulse duration (seconds) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 single pulse (thermal resistance) thermal impedance - z (k/w ) 2 t 1 t p dm notes: 1. duty factor d = t / t 2. peak t = p x z + t jdmthjc c 2 1
HFA180NH40 4 pd-2.452 rev. b 03/99 fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 5 - typical reverse recovery vs. di f /dt fig. 6 - typical recovery current vs. di f /dt 0 100 200 300 400 500 100 1000 f di /dt - (a/ s) t - (ns) rr v = 200v t = 125 c t = 25c r j j i = 200a f i = 70a f i = 180a f 1 10 100 100 1000 f di /dt - (a/ s) i - (a) irrm i = 70a i = 200a i = 180a v = 200v t = 12 5 c t = 25c r j j f f f 0 2000 4000 6000 100 1000 f di /dt - (a/ s) rr q - (nc) i = 70a i = 200a i = 180a v = 200v t = 125 c t = 25c r j j f f f 100 1000 10000 100 1000 f di /dt - (a/ s) di(rec)m/dt - (a/ s) i = 70a i = 200a i = 180a v = 200v t = 125 c t = 25c r j j f f f
HFA180NH40 5 pd-2.452 rev. b 03/99 4. q rr - area under curve defined by t rr and i rrm t rr x i rrm q rr = 2 5. di (rec)m /dt - peak rate of change of current during t b portion of t rr v (aval) r(r at ed) i l(pk) v de cay time fig. 11 - avalanche test circuit and waveforms fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f 1. di f /dt - rate of change of current through zero crossing 2. i rrm - peak reverse recovery current 3. trr - reverse recovery time measured from zero crossing point of negative going i f to point where a line passing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current reverse recovery circuit irfp250 d.u.t. l = 70 h v = 200v r 0.01 w g d s dif/dt adjust current monitor high-speed switch dut rg = 25 ohm + free-w heel diode vd = 50v l = 100 h http://www.irf.com fax-on-demand: +44 1883 733420 data and specifications subject to change wit hout notice. 233 kansas st., el segundo, california 90245 u.s.a. tel: (310) 322 3331. fax: (310) 322 3332. hurst green, oxted, surrey rh8 9bb, u.k. tel: ++ 44 1883 732020. fax: ++ 44 1883 733408. 15 lincoln court, brampton, markham, ontario l6t3z2. tel: (905) 453 2200. fax: (905) 475 8801. saalburgstrasse 157, 61350 bad homburg. tel: ++ 49 6172 96590. fax: ++ 49 6172 965933. via liguria 49, 10071 borgaro, torino. tel: ++ 39 11 4510111. fax: ++ 39 11 4510220. k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo, japan 171. tel: 81 3 3983 0086. 1 kim seng promenade, great world city west tower,13-11, singapore 237994. tel: ++ 65 838 4630. 16 fl. suite d.207, sec. 2, tun haw south road, taipei, 10673, taiwan. tel: 886 2 2377 9936. world headquarters: european headquarters: ir canada: ir germany: ir italy: ir far east: ir southeast asia: ir taiwan:
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